, dnc. 20 stern ave, springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mur180e, MUR1100E switchmode power rectifiers ultrafast "e" series with high reverse energy capability these state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. features ? 10 mjoules avalanche energy guaranteed ? excellent protection against voltage transients in switching inductive load circuits ? ultrafast 75 nanosecond recovery time ? 175c operating junction temperature ? low forward voltage ? low leakage current ? high temperature glass passivated junction ? reverse voltage to 1000 v ? these are pb-free devices* mechanical characteristics: ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260c max. for 10 seconds ? shipped in plastic bags; 1,000 per bag ? available tape and reel; 5,000 per reel, by adding a "rl" suffix to the part number ? polarity: cathode indicated by polarity band maximum ratings ultrafast rectifiers 1.0 amperes, 800-1000 volts plastic axial lead marking diagram rating peak repetitive reverse voltage working peak reverse voltage dc blocking voltage mur180e MUR1100E average rectified forward current (note 1) (square wave mounting method #3 per note 3) non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) operating junction temperature and storage temperature range symbol vrrm vrwm vr 'f(av) ifsm tj. tstg value 800 1000 1.0@ ta ? 95c 35 -65 to +175 unit v a a ac a = assembly location murixoe = device code x 8 or 10 y = year ww = work week nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mur180e, MUR1100E thermal characteristics characteristics maximum thermal resistance, junction-to-ambient symbol rbja value see note 3 unit c/w electrical characteristics characteristics maximum instantaneous forward voltage (note 2) (\= 1.0 a, tj = 150c) (\ = 1 .0 a, tj = 25c) maximum instantaneous reverse current (note 2) (rated dc voltage, tj = 100c) (rated dc voltage, tj = 25c) maximum reverse recovery time (\ = 1 .0 a, di/dt = 50 amp/us) (\ - 0.5 a, in = 1.0 amp, irec = 0-25 a) maximum forward recovery time (if = 1 .0 a, di/dt = 1 00 amp/|is, recovery to 1 .0 v) controlled avalanche energy (see test circuit in figure 6) typical peak reverse recovery current (if = 1 .0 a, di/dt = 50 a/|is) symbol vf ir trr tfr waval 'hm value 1.50 1.75 600 10 100 75 75 10 1.7 unit v ha ns ns mj a 2. pulse test: pulse width = 300 us, duty cycle < 2.0%.
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